Direct monitoring of the excited state population in biased SiGe valence band quantum wells by femtosecond resolved photocurrent experiments

نویسندگان

  • P. Rauter
  • T. Fromherz
  • G. Bauer
  • N. Q. Vinh
  • B. N. Murdin
  • C. R. Pidgeon
چکیده

The authors report a direct measurement of the optical phonon intersubband hole relaxation time in a SiGe heterostructure and a quantitative determination of hole relaxation under electrically active conditions. The results were obtained by femtosecond resolved pump-pump photocurrent experiments using a free electron laser wavelength 7.9 m . Additionally, the intensity dependence of the nonlinear photocurrent response was measured. Both types of experiments were simulated using a density matrix description. With one parameter set, a consistent modeling was achieved confirming the significance of the extracted heavy hole relaxation times. For an intersublevel spacing of 160 meV, a value of 550 fs was obtained. © 2006 American Institute of Physics. DOI: 10.1063/1.2397004

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تاریخ انتشار 2006